Omniprobe's FIB and SEM Blog

by Cheryl Hartfield

FIB applications and developments for integrated circuits were a hot topic at ISTFA’99, as the acceptance and fan-out of FIB technology to the semiconductor industry were  well underway in this time period.  As documented in an ISTFA 1999 Trip Report, some of the FIB User Group discussion centered on circuit edit applications.  Excerpts from this follow below:

by Cheryl Hartfield

FIB user groups have been very active since the late 1990’s and are important networking venues to learn the latest and often unpublished information about industry and technology.  The ISTFA’99 FIB User Group was no exception.  Given the emergence of Cu metallization technology, flip chips, and backside analysis for IC’s in the late 90’s, it is not surprising the 1999 user group discussed gas assisted etching of Cu and the impact of FIB damage to sample preparation.

by Cheryl Hartfield

The semiconductor industry was and continues to be a driving force in the development of FIB-based TEM preparation techniques.  The International Symposium on Test and Failure Analysis (ISTFA), held every November, is one of the premier knowledge exchange forums for characterization and failure analysts in the IC industry.  Given the prevalence of topical subjects on focused ion beams and TEM sample preparation at this venue, it is interesting to revisit highlights from ISTFA 1999. This article reviews advances that were new to the state of TEM preparation technology 10 years ago, and what has happened since then.

by Cheryl Hartfield

In the semiconductor industry, packaging development and Si technology development are often dependant upon each other.  This is due to the  requirement for the Si chip to actually be "packageable", and for packaging teams to develop new processes to handle "new silicon".  The interface between the package and the chip sees high stresses. The interface typically covers a large area, making the Total Release™ method for in situ lift-out an ideal approach to rapidly biopsy the area of interest.

by Cheryl Hartfield

The interaction of an ion beam with a material, at a given kV, varies as a function of the material type and the angle of incidence (AOI).  The AOI is the angle of a beam relative to a vertical unit vector drawn normal to the sample surface.  It defines the approach angle of an ion beam to a surface that will be imaged or milled.  The AOI influences milling rate, amount of redeposition, and sample geometries.  Since the ion beam axis is fixed on the majority of ion beam microscopes, in practice the AOI is varied by adjusting the stage tilt. 
Small changes to the AOI, depending on application, can have a large impact to the end result. 

by Cheryl Hartfield

There are advantages to having multiple gas precursors available for FIB preparation of TEM samples.  While a single gas can adequately meet the FIB milling protection layer and in situ lift-out welding needs for many samples, there are times when another precursor better meets the analysis needs and can make the difference between a successful or inconclusive analysis.

by Cheryl Hartfield

Every now and then, new technology is introduced that truly advances the state of the art of failure analysis.  Focused ion beam (FIB) microscopes and in situ lift-out (INLO) methods are one such example for the semiconductor industry.  Traditionally, FA tools involve hardware and software.  However, recent trends are proving communication tools can be equally valuable.  A June 2010 Sparkfun web posting resulted in a rapid identification of the true identity of a counterfeit IC.

by Cheryl Hartfield

Today, FIB sample preparation is spreading to many industries outside semiconductor, including biology, geology, nanophotonics, nanotube and nanowire research, catalyst research, and many others.  Dedicated FIB user groups exist in Europe (EFUG) and North America (DC area FIB user group) to share knowledge.  Variants of the FIB preparation method have developed in response to needs for automated preparation, faster preparation, and flexible preparation to accommodate specific goals.  Key strengths of the different methods are summarized here, while detailed information is available in the references.

by Cheryl Hartfield

Welcome! Omniprobe's blog updates those interested in ion and electron microscopy technology, processes and imaging with valuable information, such as industry "state of the art" technology advances, methods and solutions, as well as related news and events. We promote an open forum and discussion.  Participate by signing up for our RSS feed and contributing comments.