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FIB Incidence Angles Impact Lift-Out Sample Success

by Cheryl Hartfield

The interaction of an ion beam with a material, at a given kV, varies as a function of the material type and the angle of incidence (AOI).  The AOI is the angle of a beam relative to a vertical unit vector drawn normal to the sample surface.  It defines the approach angle of an ion beam to a surface that will be imaged or milled.  The AOI influences milling rate, amount of redeposition, and sample geometries.  Since the ion beam axis is fixed on the majority of ion beam microscopes, in practice the AOI is varied by adjusting the stage tilt. 
AOI unit vectorSmall changes to the AOI, depending on application, can have a large impact to the end result.  One such example is the case of final TEM thinning, where tilt offsets of plus or minus 1 to 2 degrees from normal can make the difference between sloped or vertical lamella faces.  Likewise, the AOI plays a large role in the success of in situ lift-out.  Large lift-out samples destined for TEM/STEM, EDS, or 3D imaging can be created rapidly by performing “wedge preparation”.

Lift Out Wedges
Wedge preparation is a common approach used by Omniprobe’s Total Release™ in situ lift-out method and atom probe preparation.  The wedge is created by milling at 2 angles of incidence.  If not understood and correctly configured, the final geometry of the lift-out sample may not contain the region of interest.  High AOIs create shallow samples, while low AOIs create deep samples.

Low vs High AOI as a function of sample geometry

One way to rapidly calculate different AOIs is by use of any of the free online triangle calculators, such as those available at HandyMath.com, ostermiller.org, or csgnetwork.com.  These are useful to identify the AOI required for a given depth. 

Once the required AOI is identified, it is simple to calculate the required stage tilt to achieve the AOI by the formula:

AOI = ION BEAM AXIS ANGLE - STAGE TILT

The ion beam axis angle is defined by the position of the ion column relative to the vertical line (electron column axis).  Most instruments on the market use a primary ion beam axis of zero degrees in the case of single beam FIBs, or an ion beam axis between 52 to 54 degrees for FIB-SEM instruments.  For the creation of wedge samples at high incidence angles >40 degrees, a 2 degree AOI variation impacts the final depth by ~1µm.  Thus in practice, the milling recipe to achieve the geometry should readily translate between the different microscopes without requiring adjustment for the different ion beam axes, if a lift-out wedge is designed 1µm longer than the requirement.  Note however, beam tailing may vary between columns, so fine tuning may still be required to adjust for beam tailing.

The example below can be used to estimate depth or AOI for a wedge with an 8um side. 

AOI vs depth 8us 500pThe online triangle calculators are useful to create similar graphs for alternate side lengths.  Understanding incidence angle and planning milling geometries beforehand make in situ lift-out preparation easier and faster. 

The views and opinions expressed herein represent those of the author and are not necessarily those of Omniprobe, Inc., or its employees.  Any mention of product or company names are not endorsements.  Trademarks mentioned in this blog are the exclusive property of their respective owners.

Comments

Hi Cheryl, 
Have you had an opportunity to try using the smaller AOIs to pluck deeper wedges?  
Trevor
Posted @ Tuesday, October 26, 2010 12:38 PM by Trevor Clark
@Trevor, in practice we usually prefer the smaller AOI as the "deeper" geometry facilitates better positional stability before and during lift-out. I am not sure which AOI you are using in your Total Release script, but was going to recommend you try a smaller AOI for the stainless steel sample to see if it cuts better with less redeposition.
Posted @ Wednesday, October 27, 2010 11:53 AM by Cheryl Hartfield
Hi Cheryl, 
 
 
 
How long typically does it take to mill (eg:15um witdh sample) with the Total Release method before lift out can be perform? 
 
 
 
Best Regards, 
 
WF Kho
Posted @ Monday, February 21, 2011 7:07 AM by Kho
Hi WF, 
It depends on the substrate and how deep. I can get a 15um wide 5um deep chunk out in 6 minutes in Si and 4 minutes in GaAs with a 7nA beam.  
Trevor Clark 
Penn State
Posted @ Monday, February 21, 2011 3:31 PM by Trevor Clark
@WF, Trevor is correct, the time will depend on the depth, material and beam parameters chosen. One of our customers just reported creating a sample in 2 minutes! I think this was a 10um length and using 6.5nA and 13nA beams. He reports these larger currents do not work so well on a Pt sample (solid Pt, not FIB-deposited). I will ask him to add his insights here.
Posted @ Monday, February 21, 2011 3:43 PM by Cheryl Hartfield
Cheryl, Trevor, 
 
Thanks for the info. 2-6 minutes to lift out is impressive. I am working with silicon...seeing redeposition during angle cut. Do you use insulator enhance etch for milling? 
 
 
 
WF Kho
Posted @ Monday, February 21, 2011 11:17 PM by WF Kho
@WF, although I've thought about it, I haven't tried any gases to assist. If you have redeposition, either your beam current or dimensions are not optimized (and it is critical that the beam is well aligned). I will send you a presentation/tutorial with some tips for beam currents and geometries for the milling pattern.
Posted @ Tuesday, February 22, 2011 5:00 PM by Cheryl Hartfield
Hello WF,  
 
I found that if you make the angled cut bigger by just a small amount (0.5 microns) you can reduce the amount of redeposition. The dimension that needs to be enlarged is along the side of the lamella. See below. 
 
 
 
 
 
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enlarge this way: 
 
 
 
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Alternatively, if your system has extensive scan capability you can use a milling strategy that generates less redeposition.
Posted @ Tuesday, March 08, 2011 8:54 AM by Nicholas
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